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Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution
Journal Title Advances in Electrical and Electronic Engineering
Journal Abbreviation AEEE
Publisher Group Technical University of Ostrava (VSB)
Website http://advances.utc.sk/index.php/AEEE
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Title Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution
Authors Vavrunkova, Veronika; Mullerova, Jarmila; Sutta, Pavel
Abstract We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.
Publisher Faculty of Electrical Engineering and Computer Science
Date 2011-06-20
Source Advances in Electrical and Electronic Engineering Vol 6, No 3 (2007): September
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