Stimulated Emission from InAs (GaAs) Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region
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| Title | Stimulated Emission from InAs (GaAs) Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region |
| Authors | |
| Abstract | Our study is focused on the optical and electronic properties of InAs (GaAs) monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs)/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low temperatures what is highly interesting for potential device applications. |
| Publisher | Faculty of Electrical Engineering and Computer Science |
| Date | 2011-06-29 |
| Source | Advances in Electrical and Electronic Engineering Vol 1, No 1 - 2 (2002): March - June |
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