Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure
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Title | Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure |
Authors | |
Abstract | The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes. |
Publisher | Faculty of Electrical Engineering and Computer Science |
Date | 2011-06-17 |
Source | Advances in Electrical and Electronic Engineering Vol 7, No 1 - 2 (2008): March - June |
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