Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
|
| Title | Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon |
| Authors | |
| Abstract | The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slightincrease in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si. |
| Publisher | Faculty of Electrical Engineering and Computer Science |
| Date | 2011-06-22 |
| Source | Advances in Electrical and Electronic Engineering Vol 5, No 1 - 2 (2006): March - June |
| Rights | Authors who publish with this journal agree to the following terms:Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the works authorship and initial publication in this journal.Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journals published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access). |