Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods
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| Title | Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods |
| Authors | |
| Abstract | The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects. |
| Publisher | Faculty of Electrical Engineering and Computer Science |
| Date | 2011-07-07 |
| Source | Advances in Electrical and Electronic Engineering Vol 3, No 2 (2004): June |
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