The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices
|
| Title | The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices |
| Authors | |
| Abstract | This paper presents the characteristics of solid-phase interaction of aluminum with silicon carbide in the process of creating a diffusion welding of contacts to semiconductor devices. It is shown that the solid-phase etching of silicon carbide has an isotropic polishing effect. Proved that not involved in dissolution carbon atoms precipitate as an amorphous thin layer. Are given the differences of the diffusion welded aluminum interaction between a semiconductor silicon carbide and silicon.DOI: http://dx.doi.org/10.5755/j01.eee.18.8.2610 |
| Publisher | Kaunas University of Technology |
| Date | 2012-10-26 |
| Source | Elektronika ir elektrotechnika Vol 18, No 8 (2012) |
| Rights | Autorių teisės yra apibrėžtos Lietuvos Respublikos autorių teisių ir gretutinių teisių įstatymo 4-37 straipsniuose. |