Studio computazionale di processi microscopici rilevanti
per la crescita di film semiconduttori
|
| Title | Studio computazionale di processi microscopici rilevanti per la crescita di film semiconduttori |
| Authors | |
| Abstract | We present a detailed study of some atomic-scale processes fundamental in understanding Si and Ge thin-film growth. Our research is focused on two different systems. First, we have investigated Ge atoms surface mobility on Ge(105). Such surface is of particular interest since it characterizes the lateral facets of the Ge quantum dots which are spontaneously formed during Ge growth on Si(001). Two fundamental results are reported: a) diffusion is basically isotropic b) at the typical experimental temperatures adatoms move really fast. Such results have been used to model the experimentally observed morphological transition of three-dimensional Ge islands. The second system which we considered is the hydrogenated Si(001)(1x2) surface. By Car-Parrinello molecular dynamics simulations, we computed the probability that a SiH3 radical, i.e. one of the key Si-film growth precursors in PECVD-like (Plasma-Enhanced Chemical Vapor Deposition) ractors, is able to extract a surface hydrogen during its thermal-energy impact with the surface. Our results show a strong occurrence of such a mechanism, which thus plays an important role in determining the film growth rate since it allows for the creation of new reactive sites, characterized by surface dangling bonds. |
| Publisher | CILEA |
| Date | 2006-12-14 |
| Source | Research Activities on High Performance Computing Clusters at CILEA 2006 2006 |
| Rights | Copyright 2007 CILEA |