Temperature and Doping Dependencies of Hot Electron Transport Properties in Bulk GaP, InP and Ga0.5In0.5p
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| Title | Temperature and Doping Dependencies of Hot Electron Transport Properties in Bulk GaP, InP and Ga0.5In0.5p |
| Authors | |
| Abstract | An ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to self-heating and high ambient temperature device modeling. |
| Publisher | Indian Society for Education and Environment (ISEE) |
| Date | 2009-10-01 |
| Source | Indian Journal of Science and Technology Volume 2, Issue 10, October 2009 |